* Max rDS(on) = 8.0 mW at VGS = −4.5 V, ID = −12 A
* Max rDS(on) = 9.8 mW at VGS = −2.5 V, ID = −10 A
* Max rDS(on) = 13 mW at VGS = −1.8 V, ID = −9.3 A
*.

* Battery Management
* Load Switch DATA SHEET www.onsemi.com VDS −20 V rDS(on) MAX 8 mW @ −4.5 V 9.8 mW @ −2..

This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness. Features
* Max rDS(on) = 8.0 mW at VGS = −4.5 V, ID = −12 A
* Max rDS(on) = 9.8 mW at VGS.

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